Single-crystalline AlN grown by Tokuyama unique HVPE is a substrate with low dislocation density, high UV transparency and low impurity concentration.
AlN has the widest bandgap energy among group Ⅲ-Ⅴ semiconductors and a high thermal conductivity.
Thus, AlN has attracted much attention as a substrate material for AlGaN-based deep UV light emitting devices and electronic devices.