R&D
AlN single crystal substrates
Single-crystalline AlN grown by Tokuyama unique HVPE is a substrate with low dislocation density, high UV transparency and low impurity concentration.
AlN has the widest bandgap energy among group Ⅲ-Ⅴ semiconductors and a high thermal conductivity.
Thus, AlN has attracted much attention as a substrate material for AlGaN-based deep UV light emitting devices and electronic devices.
Photograph of free-standing AlN substrate and AFM image(surface)
AlN Templates by HVPE
Features
- Low dislocation density
- High UV transparency
- Low impurity concentration
- High thermal conductivity
Applications
- Electronic devices
Free-standing AlN substrate by HVPE
Features
- Low dislocation density
- High UV transparency
- Low impurity concentration
- High thermal conductivity
Applications
- Electronic devices
- Deep UV laser diode
- Deep UV light emitting diode